SMG2342NE 5.2 a, 40 v, r ds(on) 86 m ? n-channel enhancement mosfet elektronische bauelemente 30-dec-2010 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. sc-59 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sc-59 saves board space. ? fast switching speed. ? high performance trench technology. package information package mpq leadersize sc-59 3k 7? inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 40 v gate-source voltage v gs 20 v continuous drain current 1 t a =25c i d 5.2 a t a =70c 4.1 pulsed drain current 2 i dm 30 a continuous source current (diode conduction) 1 i s 1.6 a power dissipation 1 t a =25c p d 1.3 w t a =70c 0.8 operating junction and st orage temperature range t j , t stg -55 ~ 150 c thermal resistance data maximum junction to ambient 1 t Q 5 sec r ja 100 c/w steady-state 166 notes 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 esd protection diode 2kv
SMG2342NE 5.2 a, 40 v, r ds(on) 86 m ? n-channel enhancement mosfet elektronische bauelemente 30-dec-2010 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min typ max unit test conditions static gate-threshold voltage v gs(th) 1 - - v v ds = v gs , i d = 250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - 1 a v ds = 32v, v gs = 0v - - 25 v ds = 32v, v gs = 0v, t j =55 c on-state drain current 1 i d(on) 20 - - a v ds = 5v, v gs = 10v drain-source on-resistance 1 r ds(on) - - 86 m ? v gs = 10v, i d = 5.2a - - 128 v gs = 4.5v, i d = 3.7a forward transconductance 1 g fs - 40 - s v ds = 15v, , i d = 5.2a diode forward voltage v sd - 0.7 - v i s = 2.3a, v gs = 0v dynamic 2 total gate charge q g - 4.0 - nc i d = 5.2a v ds = 15v v gs = 4.5v gate-source charge q gs - 1.1 - gate-drain charge q gd - 1.4 - turn-on delay time td (on) - 16 - ns i d = 1a, v dd = 25v v gen = 10v r l = 25 ? rise time t r - 5 - turn-off delay time td (off) - 23 - fall time t f - 3 - notes 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not s ubject to production testing.
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